SSM6N58NU mosfet equivalent, n-channel mosfet.
(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS.
* Power Management Switches
* DC-DC Converters
2. Features
(1) 1.8-V gate drive voltage. (2) Low drain-source on.
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